Scientists at the Samsung Advanced Institute of Technology have discovered that a revolutionary material could be the perfect solution for use in the next generation of semiconductors. This class of devices is fundamental to the development of a series of pieces of hardware, from processors to RAM memories and storage drives.
Entanglement was used quantum to transfer data between electrons separated by some distance
In collaboration with researchers at the Ulsan National Institute of Science and Technology (UNIST) and the University of Cambridge, the staff of the South Korean manufacturer experimented with the use of a compound called amorphous boron nitride (a-BN) to create a new one. type of semiconductors.
The study developed by the three institutions was published in the scientific journal Nature and describes a material consisting of boron and nitrogen atoms that join an amorphous molecular structure. It all started with SAIT scientists working on the development of two-dimensional materials for the creation of next generation processors.
This type of compound involves the use of crystalline materials with a single layer of atoms. At first, the researchers were working on research and development of graphene. Through this line of research, Samsung people had already achieved innovative results, such as the development of a new graphene transistor.
“To improve the compatibility of graphene with silicon-based semiconductor processes, the growth of wafer-scale graphene on semiconductor substrates must be implemented at a temperature below 400 ° C. We are also working continuously to expand graphene applications beyond semiconductors “.
Hyeon-Jin Shin, principal researcher at SAIT
According to the TechPowerUp website, amorphous boron nitride is a very suitable compound for this use, especially because of its extremely low dielectric constant of 1.78. It also has very strong electrical and mechanical properties, allowing it to be used as an interconnect insulation material – minimizing electrical interference.